2SJ574BPTL-E(2014) Hoja de datos - Renesas Electronics
Número de pieza
2SJ574BPTL-E
Fabricante
Renesas Electronics
Features
• Low on-resistance
RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA)
RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA)
• 4 V gate drive device.
• Small package (MPAK)
Page Link's:
1
2
3
4
5
6
7
8
Número de pieza
componentes Descripción
Ver
Fabricante
Silicon P Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Renesas Electronics
P-Channel MOS FET / High-Speed Switching
NEC => Renesas Technology
P-Channel MOS FET / HIGH-SPEED SWITCHING
NEC => Renesas Technology
Silicon P-Channel MOS FET High Speed Power Switching
Renesas Electronics
