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2SJ599-Z Hoja de datos - NEC => Renesas Technology

2SJ599 image

Número de pieza
2SJ599-Z

componentes Descripción

Other PDF
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PDF
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page
9 Pages

File Size
155.7 kB

Fabricante
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.


FEATURES
• Low on-state resistance:
  RDS(on)1= 75 mΩMAX. (VGS= –10 V, ID= –10 A)
  RDS(on)2= 111 mΩMAX. (VGS= –4.0 V, ID= –10 A)
• Low input capacitance:
  Ciss= 1300 pF TYP. (VDS= –10 V, VGS= 0 V)
• Built-in gate protection diode
• TO-251/TO-252 package

Page Link's: 1  2  3  4  5  6  7  8  9 

Número de pieza
componentes Descripción
Ver
Fabricante
SWITCHING P-CHANNEL POWER MOS FET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
PDF
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
PDF
NEC => Renesas Technology

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