DESCRIPTION
The 2SK3642 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

FEATURES
• Low on-state resistance
    RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 32 A)
    RDS(on)2 = 16 mΩ MAX. (VGS = 4.5 V, ID = 18 A)
• Low Ciss: Ciss = 1100 pF TYP.
• Built-in gate protection diode