Darlington Complementary Silicon Power Transistors

This series of plastic, medium-power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.

FEATUREs
• High DCCurrent Gain - hFE = 2500 (typ) @ Ic = 5.0Adc.
• Collector Emitter Sustaining Voltage @ 30mAdc:
      VCEO(SUS) = 80Vdc(mm) - BDW46
      100 Vdc (min.) - BDW42/BDW47
• LowCollector Emitter Saturation Voltage
      VcE(sat) = 2.0 Vdc (max) @ Ic = 5.0 Adc
      3.0 Vdc (max) r§ Ic = 10.0 Adc
• Monolithic Construction with Built-in Base Emitter Shunt resistors
• TO-220AB Compact Package