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BF908WR,115 Hoja de datos - NXP Semiconductors.

BF908WR image

Número de pieza
BF908WR,115

componentes Descripción

Other PDF
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page
9 Pages

File Size
171.2 kB

Fabricante
NXP
NXP Semiconductors. NXP

DESCRIPTION
Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
   
FEATURES
• High forward transfer admittance
• Short channel transistor with high forward transfer
    admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz.
   
APPLICATIONS
• VHF and UHF applications with 12 V supply voltage,
    such as television tuners and professional
    communications equipment.
   

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Número de pieza
componentes Descripción
PDF
Fabricante
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NXP Semiconductors.
N-channel dual-gate MOS-FET
Ver
Philips Electronics
N-channel dual-gate MOS-FET
Ver
Philips Electronics
N-channel dual-gate MOS-FET
Ver
Philips Electronics
N-channel dual-gate MOS-FET
Ver
Philips Electronics
N-channel dual-gate MOS-FET
Ver
NXP Semiconductors.

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