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BLC8G27LS-180AV Hoja de datos - NXP Semiconductors.

BLC8G27LS-180AV image

Número de pieza
BLC8G27LS-180AV

componentes Descripción

Other PDF
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page
14 Pages

File Size
194.3 kB

Fabricante
NXP
NXP Semiconductors. NXP

General description
180 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.


FEATUREs and benefits
■ High efficiency
■ Excellent ruggedness
■ Designed for broadband operation
■ Low thermal resistance providing excellent thermal stability
■ Integrated ESD protection
■ Designed for low memory effects providing excellent pre-distortability
■ Lower output capacitance for improved performance in Doherty applications
■ Asymmetrical design to achieve optimal efficiency across the band
■ Decoupling leads to enable improved video bandwidth
■ Internally matched for ease of use (input and output)
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)


APPLICATIONs
■ RF power amplifier for W-CDMA base stations and multi carrier applications in the
   2496 MHz to 2690 MHz frequency range


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