Número de pieza
BUL642D2G
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ON Semiconductor
BUL642D2G Hoja de datos - ON Semiconductor
ON Semiconductor
The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for Light Ballast Application. A new development process brings avalanche energy capability, making the device extremely rugged.
FEATUREs
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 300 mA/5 V
• Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
• Integrated Collector−Emitter Free Wheeling Diode
• Fully Characterized Dynamic VCEsat
• “Six Sigma” Process Providing Tight and Reproducible Parameter Spreads
• Avalanche Energy 20 mJ Typical Capability
• Pb−Free Package is Available*
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