Número de pieza
CP624
componentes Descripción
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Central Semiconductor
CP624 Hoja de datos - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process PLANAR PASSIVATED
Die Size 27.5 x 27.5 MILS
Die Thickness 11 MILS
Anode Bonding Pad Area 7.1 x 5.1 MILS
Cathode Bonding Pad Area 7.1 x 5.1 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 13,000Å
Número de pieza
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