D857 Hoja de datos - Inchange Semiconductor
Fabricante
![Iscsemi](/logo/Iscsemi.png)
Inchange Semiconductor
![Iscsemi](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)
• Good Linearity of hFE
• Wide Area of Safe Operation
• Complement to Type 2SB762
APPLICATIONS
• Designed for power amplifier applications.
Número de pieza
componentes Descripción
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Fabricante
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor