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EMZB21C03G Hoja de datos - Excelliance MOS Corp.

EMZB21C03G image

Número de pieza
EMZB21C03G

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page
8 Pages

File Size
242.2 kB

Fabricante
EXCELLIANCE
Excelliance MOS Corp. EXCELLIANCE

Product Summary:
                               N‐CH    P‐CH
   BVDSS               30V      ‐30V
   RDSON (MAX.)  21mΩ    35mΩ
   ID                        7.5A     ‐6A

UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ESD Protection

 

Número de pieza
componentes Descripción
PDF
Fabricante
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Ver
Unspecified
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Ver
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Ver
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Ver
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Ver
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Ver
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Ver
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Ver
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Ver
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Ver
Excelliance MOS Corp.

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