General Description
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced  PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

FEATUREs
·  Q13.0 A, 20V. RDS(ON)= 70 mW@ VGS= 4.5 V
                      RDS(ON)= 95 mW@ VGS= 2.5 V
·  Q2–2.2 A, 20V. RDS(ON)= 125 mW@ VGS= –4.5 V
                       RDS(ON)= 190 mW@ VGS= –2.5 V
·  Low gate charge
·  High performance trench technology for extremely low RDS(ON).
·  SuperSOT –6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).