Número de pieza
FDC6420C
componentes Descripción
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no available.
PDF
page
8 Pages
File Size
95.8 kB
General Description
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
FEATUREs
· Q13.0 A, 20V. RDS(ON)= 70 mW@ VGS= 4.5 V
RDS(ON)= 95 mW@ VGS= 2.5 V
· Q2–2.2 A, 20V. RDS(ON)= 125 mW@ VGS= –4.5 V
RDS(ON)= 190 mW@ VGS= –2.5 V
· Low gate charge
· High performance trench technology for extremely low RDS(ON).
· SuperSOT –6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).