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GT15J331
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Toshiba
GT15J331 Hoja de datos - Toshiba
Toshiba
High Power Switching Applications
Motor Control Applications
• Fourth-generation IGBT
• Enhancement mode type
• High speed: tf = 0.10 μs (typ.)
• Low saturation voltage: VCE (sat) = 1.75 V (typ.)
• FRD included between emitter and collector
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT ( Rev : 2002 )
Toshiba
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