Número de pieza
GT60N321
componentes Descripción
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Toshiba
GT60N321 Hoja de datos - Toshiba
Toshiba
High Power Switching Applications
The 4th Generation
• FRD included between emitter and collector
• Enhancement-mode
• High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A)
FRD : trr = 0.8 µs (typ.) (di/dt = −20 A/µs)
• Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A)
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT ( Rev : 2002 )
Toshiba
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