IRFR110TRPBF - VBsemi Electronics Co.,Ltd Hoja de datos

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IRFR110TRPBF Hoja de datos - VBsemi Electronics Co.,Ltd

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IRFR110TRPBF

componentes Descripción

N-Channel 100 V (D-S) MOSFET

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page

7 Pages

File Size

875.8 kB

Fabricante

VBsemi Electronics Co.,Ltd

FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS
• Primary Side Switch

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