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IRFS640A Hoja de datos - Samsung

IRFS640A image

Número de pieza
IRFS640A

componentes Descripción

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page
6 Pages

File Size
290.6 kB

Fabricante
Samsung
Samsung Samsung

FEATURES
■ Avalanche Rugged Technology
■ Rugged Gate Oxide Technology
■ Lower Input Capacitance
■ Improved Gate Charge
■ Extended Safe Operating Area
■ Lower Leakage Current : 10μA (Max.) @ VDS= 200V
■ Lower RDS(ON) : 0.144Ω (Typ. )

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