datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  International Rectifier  >>> IRL2203S PDF

IRL2203S Hoja de datos - International Rectifier

IRL2203S image

Número de pieza
IRL2203S

componentes Descripción

Other PDF
  no available.

PDF
DOWNLOAD     

page
9 Pages

File Size
161.1 kB

Fabricante
IR
International Rectifier IR

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Logic-Level Gate Drive
Surface Mount
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

 

Page Link's: 1  2  3  4  5  6  7  8  9 
 

Número de pieza
componentes Descripción
PDF
Fabricante
POWER MOS7® MOSFET
Ver
Advanced Power Technology
HEXFET® Power MOSFET
Ver
International Rectifier
HEXFET® Power MOSFET
Ver
International Rectifier
HEXFET® Power MOSFET
Ver
International Rectifier
HEXFET® Power MOSFET
Ver
International Rectifier
HEXFET® Power MOSFET
Ver
New Jersey Semiconductor
HEXFET® Power MOSFET
Ver
Kersemi Electronic Co., Ltd.
HEXFET® Power MOSFET
Ver
International Rectifier
HEXFET® Power MOSFET
Ver
International Rectifier
HEXFET® Power MOSFET ( Rev : 2000 )
Ver
Kersemi Electronic Co., Ltd.

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]