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J624 Hoja de datos - NEC => Renesas Technology

2SJ624 image

Número de pieza
J624

Other PDF
  no available.

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page
8 Pages

File Size
67 kB

Fabricante
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SJ624 is a switching device which can be driven directly by a 1.8 V power source.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


FEATURES
• 1.8 V drive available
• Low on-state resistance
    RDS(on)1 = 54 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
    RDS(on)2 = 71 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A)
    RDS(on)3 = 108 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)


Número de pieza
componentes Descripción
Ver
Fabricante
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology

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