DESCRIPTION
The 2SK3307 is N-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES
• Super low on-state resistance:
   RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 35 A)
   RDS(on)2 = 14 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
• Low Ciss: Ciss = 4650 pF TYP.
• Built-in gate protection diode