datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  Samsung  >>> KM44H64230B-FZ PDF

KM44H64230B-FZ Hoja de datos - Samsung

KM44H16030B-GY image

Número de pieza
KM44H64230B-FZ

componentes Descripción

Other PDF
  no available.

PDF
DOWNLOAD     

page
49 Pages

File Size
620.7 kB

Fabricante
Samsung
Samsung Samsung

Key Features
Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
   -. Read latency 2, 2.5 (clock)
   -. Burst length (2, 4, 8)
   -. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM/DM for write masking only
• Auto & Self refresh
• 15.6us refresh interval
• Maximum burst refresh cycle : 8
• 66pin TSOP II package

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Número de pieza
componentes Descripción
Ver
Fabricante
DDR SDRAM Specification Version 1.0
PDF
Samsung
DDR SDRAM Specification Version 1.0
PDF
Samsung
DDR SDRAM Specification Version 0.3
PDF
Samsung
512Mb D-die DDR SDRAM Specification
PDF
Samsung
256Mb F-die DDR SDRAM Specification
PDF
Samsung
512Mb G-die DDR SDRAM Specification
PDF
Samsung
512Mb F-die DDR SDRAM Specification
PDF
Samsung
512Mb C-die DDR SDRAM Specification
PDF
Samsung
DDR SDRAM SODIMM ( Rev : 2008 )
PDF
Micron Technology
16Mx72 DDR SDRAM
PDF
White Electronic Designs => Micro Semi

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]