MH28S72PJG-6 Hoja de datos - MITSUBISHI ELECTRIC
Número de pieza
MH28S72PJG-6
Fabricante
MITSUBISHI ELECTRIC
DESCRIPTION
The MH28S72PJG is 134,217,728 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six industry standard 64M x 4 Sy nchronous DRAMs in TSOP.
The stacked structure of TSOP on a card edge dual inline package prov ides any application where high densities and large of quantities memory are required.
This is a socket-ty pe memory module ,suitable f or easy interchange or addition of module.
FEATURES
• Utilizes industry standard 64M X 4 Synchronous DRAMs in TSOP package , industry standard Resister in TSSOP package , and industrystandard PLL in TSSOP package.
• Single 3.3V +/- 0.3V supply
• Burst length 1/2/4/8/Full Page (programmable)
• Burst type sequential / interleave (programmable)
• Column access random
• Burst W rite / Single W rite (programmable)
• Auto precharge / Auto bank precharge controlled by A10
• Auto refresh and Self refresh
• LVTTL Interface
• 8192 refresh cycles every 64ms
APPLICATION
Main memoryunit for computers, Microcomputer memory.
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