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MH8S72BMG image

Número de pieza
MH8S72BMG

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page
55 Pages

File Size
561.8 kB

Fabricante
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MH8S72BMG is 8388608 - word by 72-bit Synchronous DRAM module. This consists of ten industry standard 4Mx16 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP.
The mounting of TSOP on a card edge Dual Inline package provides any application where high densities and large quantities of memory are required.
This is a socket type - memory modules, suitable for easy interchange or addition of modules.


FEATURES
• Utilizes industry standard 4M x 16 Synchronous DRAMs TSOP and industry standard EEPROM in TSSOP
• 168-pin (84-pin dual in-line package)
• single 3.3V±0.3V power supply
• Clock frequency 100MHz
• Fully synchronous operation referenced to clock rising edge
• 4 bank operation controlled by BA0,1(Bank Address)
• /CAS latency- 2/3(programmable)
• Burst length- 1/2/4/8/Full Page(programmable)
• Burst type- sequential / interleave(programmable)
• Column access - random
• Auto precharge / All bank precharge controlled by A10
• Auto refresh and Self refresh
• 4096 refresh cycle /64ms
• LVTTL Interface
• Discrete IC and module design conform to PC100 specification.
   (module Spec. Rev. 1.0 and SPD 1.2A(-7,-8), SPD 1.0(-10))


APPLICATION
   PC main memory

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MITSUBISHI ELECTRIC
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM
PDF
MITSUBISHI ELECTRIC
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM
PDF
MITSUBISHI ELECTRIC
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM
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Mitsumi
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM
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MITSUBISHI ELECTRIC
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM
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MITSUBISHI ELECTRIC

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