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MJD32C Hoja de datos - Inchange Semiconductor

MJD32C image

Número de pieza
MJD32C

componentes Descripción

Other PDF
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PDF
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page
3 Pages

File Size
294.8 kB

Fabricante
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• DC Current Gain -hFE = 25(Min)@ IC= -1A
• Collector-Emitter Breakdown Voltage- : V(BR) CEO= -100V(Min)
• Complement to Type MJD31C
• DPAK for Surface Mount Applications
• Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS
• Designed for use in general purpose amplifier and low speed switching applications.

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