The RF Line
NPN Silicon
RF Low Power Transistor

Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range.

• Specified @ 12.5 V, 870 MHz Characteristics
   Output Power = 1.5 W
   Minimum Gain = 8.0 dB
   Efficiency 60% (Typ)
• Cost Effective PowerMacro Package
• Electroless Tin Plated Leads for Improved Solderability
• Circuit board photomaster available upon request by
   contacting RF Tactical Marketing in Phoenix, AZ.