NE4210S01-T1 Hoja de datos - NEC => Renesas Technology
Número de pieza
NE4210S01-T1
Fabricante
NEC => Renesas Technology
DESCRIPTION
The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz
• Gate Length: Lg ≤ 0.20 µm
• Gate Width : Wg = 160 µm
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C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC => Renesas Technology
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
NEC => Renesas Technology
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC => Renesas Technology
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC => Renesas Technology
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC => Renesas Technology
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC => Renesas Technology
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC => Renesas Technology