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NTP6413ANG Hoja de datos - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

NTP6413ANG image

Número de pieza
NTP6413ANG

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page
3 Pages

File Size
772.4 kB

Fabricante
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DOINGTER

Description:
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features:
1) VDS=100V,ID=50A,RDS(ON)<22mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

 

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