General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240X.

FEATUREs and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High efficiency due to less heat generation

APPLICATIONs
• DC-to-DC conversion
• Supply line switching
• Battery charger
• LCD backlighting
• Driver in low supply voltage applications (e.g. lamps and LEDs)
• Inductive load driver (e.g. relays, buzzers and motors)