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PH5330E Hoja de datos - NXP Semiconductors.

PH5330E image

Número de pieza
PH5330E

componentes Descripción

Other PDF
  no available.

PDF
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page
12 Pages

File Size
201.5 kB

Fabricante
NXP
NXP Semiconductors. NXP

General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features and benefits
■ Higher operating power due to low
   thermal resistance
■ Low conduction losses due to low
   on-state resistance
■ Suitable for logic level gate drive
   sources

Applications
■ DC-to-DC convertors
■ Notebook computers
■ Portable equipment
■ Switched-mode power supplies

 

Número de pieza
componentes Descripción
PDF
Fabricante
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
Nexperia B.V. All rights reserved

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