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PHB110NQ08LT Hoja de datos - Philips Electronics

PHB110NQ08LT image

Número de pieza
PHB110NQ08LT

Other PDF
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page
13 Pages

File Size
73.7 kB

Fabricante
Philips
Philips Electronics Philips

Description
Logic level N-channel enhancement mode field-effect transistor in a plastic package
using TrenchMOS™ technology.

Features
■ Logic level threshold
■ Very low on-state resistance.

Applications
■ Motors, lamps, solenoids
■ Uninterruptible power supplies
■ DC-to-DC converters
■ General industrial applications.

Quick reference data
■ VDS ≤ 75 V
■ ID ≤ 75 A
■ Ptot ≤ 230 W
■ RDSon ≤ 8.5 mΩ.

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Número de pieza
componentes Descripción
PDF
Fabricante
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.

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