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PHD101NQ03LT Hoja de datos - NXP Semiconductors.

PHD101NQ03LT image

Número de pieza
PHD101NQ03LT

componentes Descripción

Other PDF
  no available.

PDF
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page
13 Pages

File Size
169.3 kB

Fabricante
NXP
NXP Semiconductors. NXP

General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features and benefits
■ Low conduction losses due to low on-state resistance
■ Simple gate drive required due to low gate charge
■ Suitable for logic level gate drive sources

Applications
■ DC-to-DC convertors

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Número de pieza
componentes Descripción
PDF
Fabricante
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
Nexperia B.V. All rights reserved

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