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PHD96NQ03LT Hoja de datos - NXP Semiconductors.

PHD96NQ03LT image

Número de pieza
PHD96NQ03LT

componentes Descripción

Other PDF
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PDF
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page
13 Pages

File Size
186 kB

Fabricante
NXP
NXP Semiconductors. NXP

General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features and benefits
● Low conduction losses due to low on-state resistance
● Simple gate drive required due to low gate charge

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Número de pieza
componentes Descripción
PDF
Fabricante
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS logic level FET
Ver
NXP Semiconductors.

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