General Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s high cell density DMOS technology process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint package.

FEATUREs
• 10.5 A, 20 V. RDS(ON) = 13.5 mΩ @ VGS = 4.5 V
                        RDS(ON) = 16 mΩ @ VGS = 2.7 V
• High cell density for extremely low RDS(ON)
• High power and current handling capability in a widely used surface mount package

APPLICATIONs
• DC/DC converter
• Load switch