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STM4432 Hoja de datos - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

STM4432 image

Número de pieza
STM4432

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page
5 Pages

File Size
864.2 kB

Fabricante
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DOINGTER

Description:
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features:
1) VDS=40V,ID=12A,RDS(ON)<12mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.


 

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