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IRF530   Hoja de datos

coincide,
conparecido a
IRF530   IRF5305   IRF530A   IRF530D   IRF530L   IRF530N   IRF530R   IRF530S   
comienza con
IRF530-*   IRF530/*   IRF5305*   IRF530F*   IRF530N*   IRF530P*   IRF530S*   
termina en
N/A
Incluido
*IRF530*   
Fabricante
ALL
Unspecified
Unspecified
Fairchild Semiconduc...
Harris Semiconductor
Intersil
International Rectif...
Inchange Semiconduct...
Kersemi Electronic C...
Motorola => Freescal...
New Jersey Semicondu...
ON Semiconductor
Philips Electronics
Samsung
Unspecified
STMicroelectronics
Transys Electronics
Transys Electronics ...
VBsemi Electronics C...
Vishay Semiconductor...
Fabricante
Número de pieza
componentes Descripción
PDF
ON-Semiconductor
ON Semiconductor
IRF530/D
TMOS POWER FET 14 AMPERES, 100 VOLTS RDS(on) = 0.140 Ω
Ver
KERSEMI
Kersemi Electronic Co., Ltd.
IRF5305L
HEXFET® Power MOSFET
Ver
IR
International Rectifier
IRF530NL
HEXFET® Power MOSFET
Ver
SHENZHENFREESCALE
Unspecified
IRF5305S
HEXFET® Power MOSFET
Ver
VBSEMI
VBsemi Electronics Co.,Ltd
IRF530NS
N-Channel 100-V (D-S) MOSFET
Ver
ST-Microelectronics
STMicroelectronics
IRF530F1
N-channel ENHANCEMENT MODE POWER MOS transistor
Ver
ST-Microelectronics
STMicroelectronics
IRF530FP
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Ver
SHENZHENFREESCALE
Unspecified
IRF5305L
HEXFET® Power MOSFET
Ver
IR
International Rectifier
IRF5305S
HEXFET Power MOSFET. VDSS = -55V, RDS(on) = 0.06 Ohm, ID = -31A
Ver
IR
International Rectifier
IRF530NS
HEXFET® Power MOSFET
Ver
1 2 3 4 5 6 7 8
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