![Samsung](/logo/Samsung.png)
Samsung
P-CHANNEL POWER MOSFETS
![IR](/logo/IR.png)
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
![Vishay](/logo/Vishay.png)
Vishay Semiconductors
Power MOSFET
![Intersil](/logo/Intersil.png)
Intersil
3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
![IR](/logo/IR.png)
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
![Vishay](/logo/Vishay.png)
Vishay Semiconductors
Power MOSFET
![Vishay](/logo/Vishay.png)
Vishay Semiconductors
Power MOSFET
![IR](/logo/IR.png)
International Rectifier
HEXFET Power MOSFET
![IR](/logo/IR.png)
International Rectifier
HEXFET Power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ω, ID = -1.9A