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X6351   Hoja de datos

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*AX6351*   *X6351G*   *X6351L*   *X6351M*   *X6351S*   *X6351T*   
Fabricante
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California Eastern L...
Maxim Integrated
Maxim Integrated
Renesas Electronics
Fabricante
Número de pieza
componentes Descripción
PDF
Renesas
Renesas Electronics
NX6351GP
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
Ver
CEL
California Eastern Laboratories.
NX6351GP
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8 Gb/s CPRI and 10G E-PON ONU APPLICATION
Ver
MaximIC
Maxim Integrated
MAX6351LRUT-T
Dual/Triple-Voltage µP Supervisory Circuits
Ver
MAXIM
Maxim Integrated
MAX6351MRUT-T
Dual/Triple-Voltage µP Supervisory Circuits
Ver
MaximIC
Maxim Integrated
MAX6351TYUT-T
Dual/Triple-Voltage µP Supervisory Circuits
Ver
CEL
California Eastern Laboratories.
NX6351GP29-AZ
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8 Gb/s CPRI and 10G E-PON ONU APPLICATION
Ver
MAXIM
Maxim Integrated
MAX6351LSUT-T
Dual/Triple-Voltage µP Supervisory Circuits
Ver
MaximIC
Maxim Integrated
MAX6351MTUT-T
Dual/Triple-Voltage µP Supervisory Circuits
Ver
CEL
California Eastern Laboratories.
NX6351GP35-AZ
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8 Gb/s CPRI and 10G E-PON ONU APPLICATION
Ver
MaximIC
Maxim Integrated
MAX6351MRUT-T
Dual/Triple-Voltage µP Supervisory Circuits
Ver
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