IRF6601(2002) Ver la hoja de datos (PDF) - International Rectifier
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IRF6601 Datasheet PDF : 8 Pages
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IRF6601
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
20
–––
–––
–––
1.0
–––
–––
–––
–––
––– –––
0.019 –––
––– 3.8
––– 5.0
––– 3.0
––– 20
––– 100
––– 100
––– -100
V VGS = 0V, ID = 100µA
V/°C Reference to 25°C, ID = 1mA
mΩ
VGS = 10V, ID = 26A
VGS = 4.5V, ID = 21A
V VDS = VGS, ID = 250µA
µA VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70°C
nA VGS = 20 V
VGS = -20 V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge Cont FET
Gate-to-Source Charge
Gate to Drain ("Miller")Charge
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
50 ––– –––
––– 36 54
––– 11 –––
––– 12 –––
––– 48 –––
––– 16 –––
––– 140 –––
––– 33 –––
––– 110 –––
––– 3440 –––
––– 2430 –––
––– 380 –––
S VDS = 10 V, ID = 21 A
ID = 21A
nC VDS = 16 V
VGS = 4.5 V,
VDS = 0 V, VGS = 16V
VDD = 15 V
ns ID = 21 A
RG = 5.1 Ω
VGS = 4.5 V
VGS = 0V
pF VDS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
65
21
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 26
A showing the
integral reverse
G
––– ––– 200
p-n junction diode.
S
––– 0.83 1.2
––– 0.68 –––
V TJ = 25°C, IS = 21A, VGS = 0V
TJ = 125°C, IS = 21A, VGS = 0V
––– 60 90 ns TJ = 25°C, IF = 21A, VR=15 V
––– 94 140 nC di/dt = 100A/µs
––– 62 93 ns TJ = 125°C, IF = 21A, VR=15 V
––– 88 130 nC di/dt = 100A/µs
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