IRF6601(2002) Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRF6601 Datasheet PDF : 8 Pages
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IRF6601
6000
5000
4000
3000
2000
V GS = 0V,
f = 1MHz
Ciss = C gs + C gd , C ds SHORTED
Crss = C gd
Coss = C ds + C gd
Ciss
Coss
1000
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID = 21A
10
8
VDS = 16V
VDS = 10V
VDS = 4V
6
4
2
0
0
20
40
60
80
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0
TJ = 150°C
10.0
TJ = 25°C
1.0
0.1
0.0
VGS = 0V
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
0
1
10msec
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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