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5962F0254301QXA

RadHard Schmitt CMOS 16-bit Bidirectional MultiPurpose Low Voltage Transceiver

Aeroflex UTMC 

RADIATION HARDNESS SPECIFICATIONS 1

PARAMETER

Total Dose

SEL Latchup

LIMIT

1.0E5

>113

Neutron Fluence (Note 2)

1.0E14

Notes:

1. Logic will not latchup during radiation exposure within the limits defined in the table.

2. Not tested, inherent to CMOS technology.

UNITS

rad(Si)

MeV-cm2 /mg

n/cm 2

ABSOLUTE MAXIMUM RATINGS1

SYMBOL

VI/O (Note 2)

VDD1

VDD2

TSTG

TJ (Note 3)

ΘJC

II

PD

PARAMETER

Voltage any pin

Supply voltage

Supply voltage

Storage Temperature range

Maximum junction temperature

Thermal resistance junction to case

DC input current

Maximum power dissipation

LIMIT (Mil only)

-.3 to VDD1 +.3

-0.3 to 4.0

-0.3 to 4.0

-65 to +150

+150

20

±10

1

UNITS

V

V

V

°C

°C

°C/W

mA

W

Note:

1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at

these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maxim um rating conditions for extended

periods may affect device reliability and performance .

2. For Cold Spare mode (V DD1 =VSS, V DD2 =VSS), V I/O may be -0.3V to the maximum recommended operating level of VDD1 +0.3V.

3. Maximum junction temperature may be increased to +175 oC during burn-in and life test.

DUAL SUPPLY OPERATING CONDITIONS

SYMBOL

VDD1

VDD2

VIN

TC

PARAMETER

Supply voltage

Supply voltage

Input voltage any pin

Temperature range

LIMIT

2.3 to 3.6

2.3 to 3.6

0 to VDD1

-55 to + 125

UNITS

V

V

V

°C

4

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