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HS-65647RH Datasheet PDF : 16 Pages
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Specifications HS-65647RH
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V
Input, Output or I/O Voltage . . . . . . . . . . . . GND-0.3V to VDD+0.3V
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC
Typical Derating Factor. . . . . . . . . . . . 3mA/MHz Increase in IDDOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
θJA
θJC
28 Lead SBDIP Package. . . . . . . . . . . . . 45oC/W 8.0oC/W
28/36 Lead Ceramic Flatpack Package. . 53.4oC/W 7.4oC/W
Maximum Package Power Dissipation at +125oC Ambient
28 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . 1.11W
28/36 Lead Ceramic Flatpack Package. . . . . . . . . . . . . . . . 0.94W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
28 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . .22.2mW/C
28/36 Lead Ceramic Flatpack Package. . . . . . . . . . . . .18.7mW/C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range (VDD) . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage (VIL) . . . . . . . . . . . . . . . . . . . . . . 0V to +0.2VDD
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . .0.8VDD to VDD
Data Retention Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 2.0V
Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . 40ns Max.
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
High Level Output
Voltage
Low Level Output
Voltage
High Impedance Output
Leakage Current
Input Leakage Current
Standby Supply Current
Enable Supply Current
Operating Supply
Current (Note 2)
Data Retention Supply
Current
Functional Tests
Noise Immunity
Functional Test
SYMBOL
(NOTE 1)
CONDITIONS
GROUP A
SUBGROUPS
VOH
VDD = 4.5V, IO = -5mA
VI = VDD or GND
1, 2, 3
VOL
VDD = 4.5V, IO = 8.0mA
VI = VDD or GND
1, 2, 3
IOZL or VDD = 5.5V, VO = GND or
1, 3
IOZH VDD, VI = VDD or GND
E1 = VDD, E2 = 0V
2
2
IIH or IIL VDD = 5.5V, VI = VDD or
GND
1, 2, 3
IDDSB VDD = 5.5V, IO = 0mA,
1, 3
(Note 3) VI = VDD or GND
E1 = VDD, E2 = 0V
2
2
IDDEN VDD = 5.5V, IO = 0mA,
3
VI = VDD or GND
E1 = 0.0V, E2 = VDD
1
2
IDDOP VDD = 5.5V, IO = 0mA,
3
VI = VDD or GND,
E2 = VDD, E1 = 0V,
1
f = 2MHz
2
IDDDR VDD = 2.0V, IO = 0mA,
1, 3
VI = VDD or GND
E1 = VDD, E2 = 0V
2
2
FT
VDD = 4.5V and 5.5V
7, 8A, 8B
VI = VDD or GND, f = 1MHz
FN
VDD = 4.5, VIL = 0.2 VDD
VIH = 0.8 VDD, f = 1MHz
7, 8A, 8B
TEMPERATURE
-55oC, +25oC,
+85oC, +125oC
-55oC, +25oC,
+85oC, +125oC
-55oC, +25oC
+85oC
+125oC
-55oC, +25oC,
+85oC, +125oC
-55oC, +25oC
+85oC
+125oC
-55oC
+25oC
+85oC, +125oC
-55oC
+25oC
+85oC, +125oC
-55oC, +25oC
+85oC
+125oC
-55oC, +25oC,
+85oC, +125oC
-55oC, +25oC,
+85oC, +125oC
NOTES:
1. All voltages referenced to device GND.
2. Typical IDDOP derating = 3mA/MHz (3mA increase in IDDOP per 1MHz increase in address frequency.)
3. In order for this device to be in low power standby mode. E2 must be disabled (low).
LIMITS
MIN MAX
VDD- -
0.4
-
0.4
UNITS
V
V
-10 10
µA
-30 30
µA
-60 60
µA
-1.0 1.0
µA
-
500
µA
-
4
mA
-
10
mA
-
77
mA
-
73
mA
-
64
mA
-
100 mA
-
86
mA
-
75
mA
-
50
µA
-
1
mA
-
4
mA
-
-
-
-
-
-
Spec Number 518729
826
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