HS-65647RH Ver la hoja de datos (PDF) - Intersil
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HS-65647RH Datasheet PDF : 16 Pages
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Specifications HS-65647RH
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
SYMBOL
CONDITIONS
Write Enable High to Out-
put ON
TWHQX VDD = 4.5V and 5.5V
Chip Enable to Output ON
TE1LQX VDD = 4.5V and 5.5V
TE2HQX
Output Enable to Output
ON
TGLQX VDD = 4.5V and 5.5V
Chip Enable to Output in
High Z
TE1HQZ VDD = 4.5V and 5.5V
TE2LQZ
Output Disable to Output in
High Z
TGHQZ VDD = 4.5V and 5.5V
Output Hold from Address
Change
TAXQX VDD = 4.5V and 5.5V
NOTES
1
TEMPERATURE
-55oC ≤ TA ≤ +125oC
MIN MAX UNITS
0
-
ns
1
-55oC ≤ TA ≤ +125oC
0
-
ns
1
-55oC ≤ TA ≤ +125oC
0
-
ns
1
-55oC ≤ TA ≤ +125oC
-
15
ns
1
-55oC ≤ TA ≤ +125oC
-
15
ns
1
-55oC ≤ TA ≤ +125oC
0
-
ns
NOTES:
1. The parameters listed are controlled via design or process parameters and are not directly tested. These parameters are
characterized upon initial design release and upon design changes which would affect these characteristics.
2. Applies to DIP device types only.
3. Applies to Flatpack device types only.
4. All measurements referenced to device GND.
TABLE 4. POST 300K RAD DC ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
SYMBOL
CONDITIONS
Standby Supply Current
IDDSB
VDD = 5.5V, IO = 0mA, E1 = VDD,
E2 = 0V, VI = VDD or GND
Enabled Supply Current
IDDEN
VDD = 5.5V, IO = 0mA, E1 = 0.0V,
E2 = VDD, VI = VDD or GND
Operating Supply Current
(Note 2)
IDDOP
VDD = 5.5V, IO = 0mA, f = 2MHz,
E = 0V,VI = VDD or GND
Data Retention Supply Current IDDDR VDD = 2.0V, IO = 0mA, E = VDD
TEMPERATURE
+25oC
MIN MAX UNITS
-
10
mA
+25oC
-
82
mA
+25oC
-
100 mA
+25oC
-
6
mA
NOTES:
1. DC parameters not listed in this table are tested at the +25oC pre-irradiation test limits. All AC parameters are tested at the +25oC pre-
irradiation test limits.
2. Typical IDDOP derating = 3mA/MHz (3mA increase in IDDOP per 1MHz increase in address frequency.)
Spec Number 518729
828
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