HB52R1289E22-B6B Ver la hoja de datos (PDF) - Elpida Memory, Inc

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HB52R1289E22-B6B

1 GB Registered SDRAM DIMM 128-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M × 4 Components) PC100 SDRAM

Elpida Memory, Inc 

HB52R1289E22-A6B/B6B

Relationship Between Frequency and Minimum Latency

Parameter

Frequency (MHz)

tCK (ns)

Active command to column command (same bank)

Active command to active command (same bank)

Active command to precharge command (same bank)

Precharge command to active command (same bank)

Write recovery or data-in to precharge command

(same bank)

Active command to active command (different bank)

Self refresh exit time

Last data in to active command

(Auto precharge, same bank)

Self refresh exit to command input

Precharge command to high impedance

(CE latency = 3)

(CE latency = 4)

Last data out to active command (auto precharge)

(same bank)

Last data out to precharge (early precharge)

(CE latency = 3)

(CE latency = 4)

Column command to column command

Write command to data in latency

DQMB to data in

DQMB to data out

CKE to CK disable

Register set to active command

S to command disable

Power down exit to command input

Burst stop to output valid data hold

(CE latency = 3)

(CE latency = 4)

HB52R1289E22

-A6B/B6B

PC100

Symbol Symbol 10

Notes

I RCD

2

I RC

7

1

= [IRAS + IRP]

1

I RAS

5

1

I RP

2

1

I DPL

Tdpl 2

1

I RRD

2

I SREX

Tsrx

2

I APW

Tdal 4

1

2

= [IDPL + IRP]

I SEC

7

= [IRC]

3

I HZP

I HZP

I APR

I EP

I EP

I CCD

I WCD

I DID

I DOD

I CLE

I RSA

I CDD

I PEC

I BSR

I BSR

Troh 3

Troh 4

0

–2

–3

Tccd 1

Tdwd 1

Tdqm 1

Tdqz 3

Tcke 2

Tmrd 1

0

1

2

3

Data Sheet E0017H20

14

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