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BUT18F

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUT18F; BUT18AF

handbook, full pagewidth

102

IC

(A)

ICM max

10

IC max

1

MGB922

II

I

10−1

10−2

10−3

DC

BUT18F

BUT18AF

10−4

1

10

102

103 VCE (V) 104

Mounted without heatsink compound and 30 ±5 N force on centre of package.

Tmb < 25 °C

I - Region of permissible DC operation.

II - Permissible extension for repetitive pulse operation.

Fig.4 Forward bias SOAR.

1999 Jun 11

5

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