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BUT18F

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUT18F; BUT18AF

handbook, halfpage

+IB

−VBE

VCC

LC

LB

D.U.T.

VCL

MGE246

VCL = 300 V; VCC = 30 V; VBE = −5 V; LB = 1 µH; LC = 200 µH.

Fig.12 Test circuit inductive load.

handbook, halfpage

tr

90%

IB

10%

90%

IB on

t

−IB off

IC on

IC

10%

tf

ts

toff

t

MGE238

Fig.13 Switching time waveforms with

inductive load.

1999 Jun 11

8

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