¡ Semiconductor
MSM7507-01/02/03
ELECTRICAL CHARACTERISTICS
DC and Digital Interface Characteristics
Parameter
Symbol
Condition
(VDD = +5 V ±5%, Ta = –30°C to +85°C)
Min. Typ. Max. Unit
Power Supply Current
IDD1 Operating mode
—
5.0
10 mA
Power-save mode, PDN = 1,
IDD2 XSYNC Æ OFF
—
1.5
3.0 mA
IDD3 Power-down mode, PDN = 0
—
Input High Voltage
VIH
—
2.2
Input Low Voltage
VIL
—
0.0
High Level Input Leakage Current IIH
—
—
Low Level Input Leakage Current IIL
—
—
Digital Output Low Voltage
VOL Pull-up resistance > 500 W
0.0
Digital Output Leakage Current
IO
—
—
Input Capacitance
CIN
—
—
0.01 0.05 mA
—
VDD
V
—
0.8
V
—
2.0 mA
—
0.5 mA
0.2
0.4
V
—
10
mA
5
—
pF
Transmit Analog Interface Characteristics
Parameter
Input Resistance
Output Load Resistance
Output Load Capacitance
Output Amplitude
Offset Voltage
Symbol
Condition
RINX
RLGX
CLGX
VOGX
VOSGX
AIN+, AIN–
GSX with respect to SG
Gain = 1
(VDD = +5 V ±5%, Ta = –30°C to +85°C)
Min. Typ. Max. Unit
10
—
— MW
20
—
— kW
—
—
30
pF
–1.2
—
+1.2 V
–20
—
+20 mV
Receive Analog Interface Characteristics
(VDD = +5 V ±5%, Ta = –30°C to +85°C)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Input Resistance
RINPW PWI
10
—
— MW
RLVF VFRO with respect to SG
20
—
—
kW
Output Load Resistance
AOUT+, AOUT– (each) with
RLAO respect to SG
0.6
—
—
kW
Output Load Capacitance
CLVF VFRO
CLAO AOUT+, AOUT–
—
—
30
pF
—
—
50
pF
Output Amplitude
VOVF
VFRO, RL = 20 kW with
respect to SG
–1.2
—
+1.2 V
VOAO
AOUT+, AOUT–, RL = 0.6 kW
with respect to SG
–1.3
—
+1.3 V
VOSVF VFRO with respect to SG
–100
—
+100 mV
Offset Voltage
AOUT+, AOUT–, Gain = 1 with
VOSAO respect to SG
–100
—
+100 mV
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