MC33102DR2 Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Lista de partido
MC33102DR2 Datasheet PDF : 15 Pages
| |||
MC33102
5.0
Awake mode (MHz)
4.5
4.0
350
Sleep mode (kHz)
300
VCC = +15 V
250 VEE = -15 V
f = 20 kHz
200
-55 -40 -25 0 25 50
85
TA, AMBIENT TEMPERATURE (°C)
Figure 19. Gain Bandwidth Product
versus Temperature
3.5
125
RL = 10 k
t, TIME (5.0 ms/DIV)
Figure 20. Sleep Mode to Awake Mode
Transition Time
RL = 600 W
t, TIME (2.0 ms/DIV)
Figure 21. Sleep Mode to Awake Mode
Transition Time
2.0
1.5
TA = 25°C
1.0
TA = - 55°C
0.5
TA = 125°C
0
3.0
6.0
9.0
12
15
18
VCC, ⎜VEE⎮, SUPPLY VOLTAGE (V)
Figure 22. Awake Mode to Sleep Mode
Transition Time versus Supply Voltage
15
Sleep mode
13
11
Awake mode
9.0 VCC = +15 V
VEE = -15 V
7.0
RT = R1 + R2
VO = 0 V
TA = 25°C
5.0
10
100
R1
R2
1.0 k
VO
10 k
RT, DIFFERENTIAL SOURCE RESISTANCE (W)
Figure 23. Gain Margin versus Differential
Source Resistance
70
60
50
VCC = +15 V
VEE = -15 V
RT = R1 + R2
40 VO = 0 V
TA = 25°C
30
Sleep mode
Awake mode
20
10
0
10
R1
VO
R2
100
1.0 k
10 k
RT, DIFFERENTIAL SOURCE RESISTANCE (W)
100 k
Figure 24. Phase Margin versus Differential
Source Resistance
http://onsemi.com
9
Share Link: 