RF2689 Ver la hoja de datos (PDF) - RF Micro Devices
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RF2689 Datasheet PDF : 20 Pages
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Preliminary
RF2689
Parameter
Specification
Unit
Min.
Typ.
Max.
Condition
GSM/DCS Mode
Temp=25°C, VCC=3V, ZLOAD=60kΩ diff.,
LO=1080MHz@ -10dBm, ZSOURCE=500Ω
IF Frequency
225
MHz
2nd IF Frequency
45
MHz
LO Frequency
1080
MHz
LO Input Level
-20
-10
0
dBm
LO Input Impedance
50
Ω
Single-ended.
Maximum Voltage Gain
77
83
dB
VGC=0.5V to 2.4V
Pin-to-Pin voltage gain.
Note: 10dB additional voltage gain in input
match 50Ω to 500Ω.
Minimum Voltage Gain
-15
-10
-5
dB
Gain Variation versus VCC and
-3
+2
+3
dB
Temperature
Gain Control Voltage
0.3
2.4
V
Defined with external 10kΩ resistor in series
with GC pin. Analog gain control.
Noise Figure
6
8
dB
Maximum Gain. VGC=2.4V
Input IP3
80
82
Minimum Gain VGC=0.3V
Blockers at 800kHz and 1650kHz offset.
7
-54
-49
dBm
Maximum Gain. VGC=2.4V
-5
0
dBm
Minimum Gain. VGC=0.3V
Inband Output 1dB Compression 1.5
2.5
VP-P
Maximum Gain. Measured differentially.
Compression
Out of band blocker causing 1dB of inband
gain compression. Blocker at 800kHz offset.
-65
dBm
Maximum Gain. VGC=2.4V
-17
dBm
Minimum Gain. VGC=0.3V
GSM IF Input Impedance
1200
Ω
Single-ended
2400
Ω
Balance. An external resistor across the dif-
ferential input is used to define the input
impedance.
Butterworth third order, FC250k+10%
Baseband 3dB Bandwidth
225
250
275
kHz
3dB rolloff from 50kHz offset
Calibrated. FCLK=13MHz
100
400
kHz
Uncalibrated.
Sideband Suppression
27
dB
A measure of IQ gain match and IQ quadra-
ture accuracy. Measured for baseband fre-
quencies 100kHz to 2.5MHz.
DC Offset
+60
mV
Baseband External Load
20
60
kΩ
Resistive Load Impedance.
Differentially across op pins.
5
pF
Capacitive Load Impedance.
To ground.
Output DC Voltage
VCC - 1.3
VCC - 1.6
VCC - 1.9
V
IQ Amplitude Balance
+0.2
+0.5
dB
VGC=0.3V, PIN=-30dBm
IQ Amplitude Balance
+2
+5
degree VGC=0.3V, PIN=-30dBm
Rev A4 010815
7-41
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