G20N50C-GE3 Ver la hoja de datos (PDF) - Vishay Semiconductors
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G20N50C-GE3 Datasheet PDF : 8 Pages
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SiHG20N50C
Vishay Siliconix
105
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
104
Coss = Cds + Cgd
Ciss
103
102
Coss
10
Crss
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = 17 A
16
VDS = 400 V
VDS = 250 V
VDS = 100 V
12
8
4
0
0
30
60
90
120
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
TJ = 150 °C
10
TJ = 25 °C
1000
100
Operation in this area limited
by RDS(on)
10
100 µs
1
TC = 25 °C
TJ = 150 °C
Single Pulse
1 ms
10 ms
0.1
10
100
1000
10 000
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
VGS = 0 V
0.1
0.2
0.5
0.8
1.1
1.4
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
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4
Document Number: 91382
S11-0440-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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