G20N50C-GE3 Ver la hoja de datos (PDF) - Vishay Semiconductors

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G20N50C-GE3

Power MOSFET

Vishay Semiconductors 

SiHG20N50C

Vishay Siliconix

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.05

0.02

Single Pulse

0.01

10-4

10-3

10-2

0.1

1

Pulse Time (s)

Fig. 10 - Normalized Thermal Transient Impedance, Junction-to-Case (TO-247)

VDS

VGS

Rg

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 11a - Switching Time Test Circuit

VDS

VDS

tp

VDD

IAS

Fig. 12b - Unclamped Inductive Waveforms

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 11b - Switching Time Waveforms

VDS

Vary tp to obtain

required IAS

Rg

10 V

tp

L

D.U.T

IAS

0.01 Ω

+

- VDD

Fig. 12a - Unclamped Inductive Test Circuit

10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

Document Number: 91382

S11-0440-Rev. C, 14-Mar-11

www.vishay.com

5

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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