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IRF7335D1

Dual FETKY Co-Packaged Dual MOSFET Plus Schottky Diode

International Rectifier 

Q1 - Control FET

1000

100

VGS

TOP 10V

5.0V

4.5V

3.0V

2.7V

2.5V

2.2V

BOTTOM 2.0V

10

Typical Characteristics

IRF7335D1

Q2 - Synchronous FET & Schottky

1000

100

VGS

TOP 12V

10V

8.0V

4.5V

3.5V

3.0V

2.5V

BOTTOM 2.25V

10

1

0.1

0. 1

2.0V

20µs PULSE WIDTH

Tj = 25°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

100

VGS

TOP 10V

5.0V

4.5V

3.0V

2.7V

2.5V

2.2V

BOTTOM 2.0V

10

1

2.0V

0.1

0.1

20µs PULSE WIDTH

Tj = 150°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 3. Typical Output Characteristics

100.0

TJ = 150°C

10. 0

1. 0

TJ = 25°C

0. 1

VDS = 15V

20µs PULSE WIDTH

0. 0

2.0

2.5

3.0

3.5

4. 0

4. 5

VGS, Gate-to-Source Voltage (V)

Fig 5. Typical Transfer Characteristics

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1

0.1

0.1

2.25V 20µs PULSE WIDTH

Tj = 25°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

VGS

TOP

12V

10V

8.0V

4.5V

3.5V

3.0V

2.5V

BOTTOM 2.25V

10

2.25V

1

0.1

20µs PULSE WIDTH

Tj = 150°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 4. Typical Output Characteristics

100.0

TJ = 150°C

10.0

1.0

TJ = 25°C

0.1

2.0

VDS = 15V

20µs PULSE WIDTH

3.0

4.0

VGS, Gate-to-Source Voltage (V)

Fig 6. Typical Transfer Characteristics

3

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